/Oxide Semiconductor Device Engineer postdoctoral fellowship

Oxide Semiconductor Device Engineer postdoctoral fellowship

Research & development - Ann Arbor | More than two weeks ago

Oxide semiconductor device engineer postdoctoral fellowship

What You Will Do

Oxide semiconducting materials like indium gallium zinc oxide (IGZO) are set to significantly impact future logic and memory chips. Their exceptional properties and versatile growth techniques make them an attractive option for DRAM and transistors embedded in the back end of line (BEOL). Recent years have seen substantial advances in the adoption of oxide semiconductor transistors, but there remains a pressing need for new material discovery to meet the performance and reliability requirements of future applications. To strengthen our exploratory research, Imec is seeking a highly skilled process engineer to lead and advance its activities in the United States. This role involves a vibrant collaboration between the University of Michigan and Imec Belgium, and will be stationed in Ann Arbor, MI, co-located with University of Michigan researchers.

As the Successful Candidate:

You will provide experimental support to advance exploratory research on the engineering of novel oxide semiconducting devices for memory technology within a cross-Atlantic project. Your primary focus will be on developing oxide semiconductor device prototypes, paying attention to critical areas such as performance and reliability. The role will also perform device fabrication and electrical characterization. Your lab research activities will synchronize with Imec teams in the US, Belgium, and University of Michigan, with the outcomes of your research upscaled in Imec's 300 mm clean-room facility in Belgium.

Device development will be a joint effort between University of Michigan’s and Imec's semiconductor pilot lines and established labs. You will closely engage with materials scientists, process integration engineers, and device physicists, as well as physicists and chemistry researchers for device development and integration enhancements. Your work will take place in University of Michigan’s facilities and in Imec research labs, collaborating with an international, multidisciplinary team. Regular participation in project and team meetings is expected.

Who You Are

·       Are nearing graduation, or recently graduated, from a Ph.D. program in Electrical Engineering, Applied Physics, or Materials Science or another related field.

·       Have hands-on experience in nanodevice fabrication and characterization.

·       Have solid theoretical knowledge and practical understanding of thin film transistor device physics.

·       Are familiar with CMOS technology, device simulation, reliability analysis, and data analysis tools.

·       Have experience working with novel memory technology.

·       Have published in top-level conferences and/or high-impact journals in the field.

·       Are self-motivated, independent, innovative, results-driven, yet rigorous, and a team player with a clear focus on delivering outcomes.

·       Strong communication, interpersonal, and organizational skills to bridge research groups and project partners.

·       A strong team player with the ability to collaborate effectively within interdisciplinary teams.

·       Excellent communication skills, fostering seamless interaction with colleagues and partners.

·       Adaptable to an international context and willingness for short and long stays at Imec Belgium.

This opportunity invites you to be part of pioneering research and innovation within an international, diverse, and dynamic environment.

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