/Senior researcher III-N epitaxy by MOCVD

Senior researcher III-N epitaxy by MOCVD

Research & development - Leuven | More than two weeks ago

Senior researcher III-N epitaxy by MOCVD

What you will do

You will be a member of the epitaxy research group, which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You will work in a cross-functional team of about 15 people with whom you interact frequently. You will be part of a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts.

As a senior researcher in epitaxial growth, you will oversee the development of new MOCVD processes of III-N materials which are or might be required in the future by imec’s research programs or customers. With your deep experience in III-N deposition, device physics, material characterisation and in MOCVD hardware, you will also have an advisory and support role for your researcher, engineering, and hardware colleagues.

More specifically, you will:

  • Define and implement with your team colleagues the strategy for the development of III-N growth processes
    • Monitor industry trends and innovations
    • Identify process requirements and development opportunities
    • Actively contribute to the different research programs
    • Share and discuss your results at team and program meetings
  • Transfer optimised processes to our industrial partners (“tech transfers”)
    • Including documenting the processes, giving classroom and field trainings, and supporting the industrial partners during their initial ramp up phase
  • Report about your work to industrial partners, on international conferences, publish key results in scientific journals and turn new ideas into IP
  • Define PhD or Postdoc topics and supervise these students
  • Share your fundamental understanding on the physical and chemical processes that govern the growth dynamics of III-N materials on blanket Si substrates or patterned device wafers with your colleagues

For your integration in imec’s fab environment and on imec’s MOCVD tool, you will be coached on-the-job by a peer III-N MOCVD scientist. 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

  • You have a PhD in Physics, Material Science or similar. Hands-on experience in epitaxial growth of III-V materials by MOCVD is a must, preferably of GaN based materials.
  • You have a deep knowledge of III-V based devices, ideally of AlGaN/GaN based HEMTs.
  • You have a track record in your field of experience and are recognized by the worldwide community as such.
  • You are an enthusiastic and creative team player with strong networking, communication and reporting skills who likes to work in a multicultural team of researchers, PhD students, and technicians and will have frequently interactions with clients. 
  • You are working autonomously, well-organized, with a good attention to details and you set high standards in everything you do. 
  • Given the international character of imec, good knowledge of (spoken and written) English is a must.

Context

The MOCVD technology is used at imec to epitaxially grow AlGaN/GaN based materials for power and RF transistors because of their higher critical electric field for breakdown and faster switching speed. It is expected that a significant power saving will be realized over the conventional Si power devices, thus contributing to the overall energy efficiency of power supplies, photovoltaic inverters, and many other power systems.

Key to all these applications is the growth of the GaN hetero structures on 200 mm Si, using metalorganic vapour phase epitaxy (MOVPE, also known as MOCVD).

To reinforce imec’s R&D in this field we are looking for a hands-on (m/f) Senior Researcher in III N epitaxy by MOCVD, which is eager to contribute to this technological challenge.