Research & development - Leuven | More than two weeks ago
You are member of the epitaxy research group (EPI), which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You work in a cross-functional team of about 15 people with whom you interact frequently. You will work in a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts.
As a Researcher on Epitaxial growth, you will be responsible for MOCVD processes of III-N materials. Primarily, you are responsible for developing the processes that are required by imec’s programs or customers.
More specifically, you will:
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits.
The MOCVD technology
is used at imec to epitaxially grow AlGaN/GaN based materials for power and RF
transistors because of their higher critical electric field for breakdown and
faster switching speed. It is expected that a significant power saving will be
realized over the conventional Si power devices, thus contributing to the
overall energy efficiency of power supplies, photovoltaic inverters, and many
other power systems.
Key to all these applications is the growth of the GaN hetero structures on 200 mm Si, using metalorganic vapour phase epitaxy (MOVPE, also known as MOCVD).
To reinforce imec’s R&D in this field, we are looking for a hands-on (m/f) Researcher in III‑N epitaxy by MOCVD, which is eager to contribute to this technological challenge.