/Reliability Researcher

Reliability Researcher

Research & development - Leuven | More than two weeks ago

As Reliability researcher you will be obtaining a fundamental understanding of the kinetics of charge trapping in the defects is crucial for enhancing device performance and enabling the future 6G/mmWave technologies.

Reliability researcher on GaN and III/V based devices for wireless applications 

There has been a tremendous advancement in the domain of wireless communication technology, with the recent introduction of 6G and RF/mmWave standards for automotive, IoT and near field communication in the frequency range of 30 – 300 GHz and higher. The requirements of high scalability and low-power losses are driving the research focus towards the use of advanced GaN-HEMT devices and InP-based Heterojunction Bipolar Transistors (HBTs).  

One of the major hurdles of the large-scale integration of these high-performance RF devices with the standard-CMOS process flows is their poor reliability and operating lifetime. The inherently high defectivity of these devices severely limits the high-frequency performance metrics such as, threshold and maximum oscillation frequency (ft/fmax), parasitic losses, dynamic on-Resistance (RON), Pout and PAE. Therefore, obtaining a fundamental understanding of the kinetics of charge trapping in the defects is crucial for enhancing device performance and enabling the future 6G/mmWave technologies. 

What you will do

You will work in the front-end reliability team at imec. You will characterize new devices using standard DC characterizations and develop degradation models for new GaN and/or InP based transistors. This activity will englobe standard DC characterization to and, on a later stage, measurements within high frequency operating regimes (30GHz – 300GHz). The device RON-dispersion, Pout/PAE degradation, and drifts in ft/fmax must be characterized and comprehensive reliability models must be developed. You will aim to ultimately transfer these fundamental insights for improved circuit- and system-level design of RF-FEMs (front-end-modules) such as power amplifiers (PAs), low-noise amplifiers (LNAs) and RF switches. 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

  • You have a PhD in physics or electrical engineering.   
  • In-depth knowledge in the fields of MOSFET or GaN reliability, semiconductor device physics  
  • Excellent programming skills (Python, Matlab and/or Perl) area a must. 
  • Experience in RF characterization, big data analysis and software testing/implementation are also important, but not mandatory.  
  • Within this multiscale cross-disciplinary project, you will be part of a large imec group working in collaboration with industrial partners and therefore a team player spirit is fundamental.