Electrical Study and TCAD simulation of Highly scaled selectors for memory devices
What the context of this work is
Selectors are critical components in memory circuits, as they enable to systematically access the memory element during write/read operation and to isolate it from the rest of the circuit when access is not required. The selector characteristics are of paramount importance both for volatile and nonvolatile memory devices. In DRAM, the data retention is mainly driven by the off-current of the select transistor, which causes premature discharge of the storage capacitor. For this reason, oxide semiconductors like InGaZnO4 (IGZO), thanks to their extremely low leakage current and relatively good carrier mobility, are promising candidates to replace Si in DRAM select transistors, leading to more power-efficient memory cells while maintaining the data writing and reading at very high speed. Integration of such material in DRAM cell architecture would also open the possibility of 3D DRAM integration, which helps to continue the DRAM scaling road map. In high-density resistive cross-bar array, on the other side, both the size of active device and the capacity of the overall array are now function of the selector devices. Indeed to allow array of greater capacity the selector device should have capability of suppressing sneak-path leakage, quantitatively represented by its half Bias Nonlinearity ratio (HBNL). This can be achieved by exploiting tunneling properties of thin high bandgap semiconductor (like IGZO) sandwiched between two inert electrodes.
What you will do
In this job, you will actively contribute to the development of selectors within the Memory Device team. Through in-depth electrical characterization and TCAD simulation, you will aim at understanding the physical mechanisms driving the electrical parameters of 3-terminals and 2-terminals selectors, i.e. threshold voltage, on-current, Subthreshold Swing, etc. Thanks to your study, you will propose alternative integration schemes and materials to improve the performance of selectors for memory devices. The ideal candidate has a strong experience in electrical testing of transistors, broad knowledge of semiconductor device physics and proficiency in TCAD simulation.
What we do for you
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and to show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary.
Who you are
- You have obtained a Master's degree in Electrical & Electronics Engineering, Semiconductor device Physics, Material Science or related fields, with a PhD in one of the areas
- You have a background in electrical engineering and you have a good knowledge of device physics and technology.
- You have a strong experience in the electrical characterization of MOSFETs.
- You have experience in TCAD simulation.
- You are a communicative team player, but still you are able to work independently.
- You like taking initiative; you are persuasive and assertive, while keeping a constructive attitude.
- You show the flexibility to change between different projects according to changing priorities.
- Given the international character of imec, a fluent knowledge of English is necessary.