/GaN Power Electronics Device Modeling Engineer

GaN Power Electronics Device Modeling Engineer

Research & development - Leuven | More than two weeks ago

We are seeking a GaN Power Electronics Device Modeling Engineer for the design and testing of power devices in 200mm GaN technology.

Experienced GaN Power Electronics Device Modeling Engineer  

What you will do

Gallium Nitride (GaN) technology offers faster switching power devices with higher breakdown voltages, higher thermal conductivity and lower on-resistance than silicon (Si). GaN-based power devices plays a key role in the power conversion within battery chargers, smartphones, computers, servers, automotive, lighting systems and photovoltaics.
GaN power devices are a breakthrough technology, revolutionizing the power electronics landscape and have an exciting roadmap for next generation GaN power devices. Imec has developed 100V, 200V and 650V enhancement mode devices on 200mm GaN-on-Silicon wafers with state-of-the-art performance and reproducibility.  And it explores the next generation GaN technology with a higher level of integration (GaN-IC) and higher performances.

Imec has been pioneering GaN technology for more than 15 years. We use 200mm/8-inch wafers to realize GaN power devices at lower costs while maintaining world-class performance. Our research covers GaN epitaxy as well as device engineering and processing technology.

In this endeavor, we are seeking an experienced semiconductor device modelling engineer who can model GaN power transistors, create models based on measurement data, defining testing structures and measurements needed to provide data to validate and calibrate models.

Your tasks include:

  • Device test for device characterization and model extraction
  • Development, generation, and parameter extraction of semiconductor device compact models   
  • Interpret test data and work together with the process integration engineer to optimize the fabrication flow and layout for improved performance and reliability of the power devices.    
  • Understand the device physics, band diagram and comprehensive operation of the power device under static and dynamic modes, to guide the optimization process. 
  • Participate roadmap discussions and manage projects 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

  • You have a master or higher degree in Electrical/Electronic Engineering or similar. 
  • You have 5-10 years of experience in leading GaN technology development
  • You have experience with industry-standard device modelling software, such as Keysight IC-CAP
  • You have experience with Process Design Kits (PDKs) and SPICE simulation for device model verification
  • You have strong knowledge in HEMT device physics and fabrication of GaN power switches
Who we are
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