INFOS 2005 Scope
The 2005 INFOS conference (Insulating
Films on Semiconductors) will take place on June 22-24, 2005 in the Provinciehuis
in Leuven, Belgium. INFOS 2005 will continue the series of high-level
conferences in Europe started in 1979. The conference presents the current
status in dielectrics, semiconductor/insulator interfaces, and the physics
and technology of MOS devices.
The conference is intended to bring together
scientists and engineers oriented to materials, devices and applications.
The conference will consist of invited presentations as well as selected
contributing presentations and posters. Papers are solicited in the areas
of physics, technology, characterization, and modeling of dielectrics,
interfaces, devices and applications. The issues to be addressed include:
- SiO2 and oxynitrides:
ultimate scaling, thermal growth and deposition, physical and electrical
characterization, device properties, modelling, reliability
- High-k dielectrics: deposition,
physical and electrical characterisation, integration issues, carrier
transport and device properties, modelling, reliability
- Low-k dielectrics: deposition,
physical and electrical characterisation, integration issues, modelling,
reliability
- Dielectrics for compound semiconductors
(silicon carbide, SiGe, and III-V compounds): deposition, physical and
electrical characterisation, integration issues, carrier transport and
device properties, modelling, reliability
- Dielectrics for germanium devices:
deposition, physical and electrical characterisation, integration issues,
device properties, modelling, reliability
- Dielectrics for MIM capacitors, MEMS
and sensors, organic electronics and displays: deposition, characterization,
modelling, device properties
- Ferroelectrics: deposition, physical
and electrical characterisation, integration issues, modelling, device
properties and applications, reliability
- Novel device concepts, device properties
and applications: Bulk CMOS, SOI, Multiple gate devices, Strained-Si
devices, Ge-devices and GeOI, Non-volatile memory devices, Silicon nanocrystal
memories, FERAM and FEFET's
- Nanostructured materials and nanodevices
- Characterization and modelling of
defects in gate dielectrics and their interface with semiconductors
- Cleaning and surface preparation
techniques
- Radiation effects in dielectrics
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