© IMEC
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FIB cross-section through a hot Al via chain
© IMEC |
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Cross-sectional FIB image through a Cu damascene trench structure in a SILK
(Dow Chemical) dielectric on top of a stack of 10 dual-layers oxide hard
mask/SILK.
© IMEC |
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FIB cross-section through a 4-layer metal device.
© IMEC |
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Cross-sectional FIB image through a failure site showing the presence of a
metal short between the two Al lines.
© IMEC |
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Electromigration test structure showing the formation of a void on the cathode
and the accumulation of Si and Cu on the anode side.
© IMEC |
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Voltage contrast reveals open via positions in a contact chain structure. The
cross-section image at the position of the line shows too undeep etching of the
vias.
© IMEC |
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Tilted view of a specimen for transmission electron microscopy prepared by the
FIB trench milling procedure through a 5-layer metal via chain test structure.
© IMEC |
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Liftout sample of a DRAM. The sample was cut out of the wafer with FIB, transferred to a carrier with a micromanipulator
and glued tight by heating. After further FIB polishing two perpendicular sides of the sample can be imaged. This
technique allows wet chemical preparation like lift-off or staining and high-resolution imaging in the SEM.
© Infineon |
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Modifications on a three-layer metal structure. The layout is overlaid on the
top view FIB image taken after the modification (M1 pink, M2 blue, M3 yellow).
© IMEC |
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