The milestones and deliverables of the CARBonCHIP project are addressed in four work packages (WP):
WP1: Catalysis and CVD deposition for SWCNT’s
Work package leader: LETI
The objective of this workpackage is to understand the relations between the substrate, the catalyst and the temperature on the growth of CNT’s in order to control their properties and their density on unpatterned substrates relevant for Si technology. The main outcome from WP1 is the assessment and the ranking of catalyst systems and their CVD or PECVD in-situ growth processes.
WP2: Growth of SWCNT’s on patterned Si substrates
Work package leader: IMEC
The objective of this work package is to translate the findings of WP1 to patterned Si for the fabrication of horizontal and vertical CNT arrays. Catalysis and CNT growth processes will be investigated in view of their upscalability and compatibility with Si technology. A methodology for analysis will be investigated in line with upscaling of the technology. Common test structures will be generated based on the IMEC 0.13 um platform technology.
WP3: Grafting of SWCNT’s on Si
Work package leader: Alchimer
The objective in this work package is evaluation of the capabilities of electro-grafting as an innovative technology for the deposition of CNT’s. To achieve a high and controlled density of CNT’s with controlled diameter, length and chirality (or electrical properties), ex-situ growth of CNT’s and their subsequent assembly will be investigated.
WP4: Electrical evaluation of CNT’s in Si device structures
Workpackage leader: Intel
The aim of this work package is to demonstrate electrically the compatibility of the deposition of CNT’s on Si structures. A common mask set will be designed and a methodology will be developed using dedicated test structures to perform a statistical analysis on the quality of the CNTs and their contacts.
