EMMA Publications

This page lists the publications that have been funded by the project.

Journals

T. Kever, U. Boettger, and R. Waser, "The Influence of Different Electrode Materials on Resistive Switching in Cu:7,7,8,8-Tetracyanoquinodimethane Thin Films" ICMTD Conference Proceedings, (2007) 139-141
T. Kever, U. Böttger, C. Schindler, and R. Waser, "On the origin of bistable resistive switching in metal organic charge transfer complex memory cells", Appl. Phys. Lett., 91 (2007) 083506
Ch. Turquat, A. Demolliens, A. Merlen, J.-Ch. Valmalette, Ch. Muller, R. Müller, L. Goux, D.J. Wouters, "Microstructure and switching characteristics of CuTCNQ nanowires developed for high-density memory devices", IEEE Proceedings of 2007 Non-Volatile Memory Technology Symposium, p. 45
J. Billen, S. Steudel, R. Müller, J. Genoe, and P. Heremans, "A comprehensive model for bipolar electrical switching of CuTCNQ memories", Appl. Phys. Lett., 91 (2007) 263507
R. Müller, J. Billen, A. Katzenmeyer, L. Goux, D.J. Wouters, J. Genoe, and P. Heremans, "Resistive electrical switching of Cu+ and Ag+ based metal-organic charge-transfer complexes. Insights in the switching mechanism", Proc. Mat. Res. Soc. 1071 (2008), F06-04
R. Müller, A. Katzenmeyer, O. Rouault, L. Goux, D.J. Wouters, J. Genoe, and P. Heremans "Resistive Electrical Switching of Nonvolatile Memories from Electrodeposited CuTCNQ", Adv. Sci. Technol. 54 (2008) 464-469
M. Thomas, D. Deleruyelle, T. Kever, A. Demolliens, Ch. Turquat, Ch. Muller, U. Böttger, R. Waser, "From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures.", IEEE Proceedings of 2008 Non-Volatile Memory Technology Symposium, 2008
H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli and G. Pavia, "Atomic Layer Deposition of NiO Films on Si(100) using Cyclopentadienyl-Type Compounds and Ozone as Precursors", J. Electrochem. Soc. 155, H807 (2008)
A. Lamperti, S. Spiga, H. L. Hu, C. Wiemer, M. Perego, E. Cianci, M. Fanciulli, "Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)", Microelectronic Engineering, 85 (2008) 2425
S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, M. Fanciulli, "Resistance switching in amorphous and crystalline binary oxides grown by electron beam and atomic layer deposition", Microelectronic Engineering, 85 (2008) 2414
U. Russo, D. Ielmini, C. Cagli and A. L. Lacaita, "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices", IEEE Trans. Electron Devices 56, 186-192 (2009).
U. Russo, D. Ielmini, C. Cagli and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in NiO-based resistive switching memory (RRAM) devices", IEEE Trans. Electron Devices 56, (2009) 193-200
C. Cagli, F. Nardi and D. Ielmini, "Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices" IEEE Trans. Electron Devices 56, 1712-1720 (2009).
U. Russo, C. Cagli, S. Spiga, E. Cianci and D. Ielmini, "Impact of electrode materials on resistive-switching memory (RRAM) programmning" IEEE Electron Device Lett. 30, 817-819 (2009).
D. Ielmini, C. Cagli and F.Nardi, "Resistance transition in metal oxides induced by electronic threshold switching", Appl. Phys. Lett. 94, (2009) 063511
C. Cagli, D. Ielmini, F. Nardi and A. L. Lacaita, "Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction", IEDM Tech. Dig., (2008) 301-304
R. Müller, C. Krebs, L. Goux, D.J. Wouters, J. Genoe, P. Heremans, S. Spiga, and M. Fanciulli "Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer", IEEE Electron Device Letters 30 (2009) 620-622
R. Müller, O. Rouault, A. Katzenmeyer, L. Goux, D.J. Wouters, J. Genoe, and P. Heremans "Electrodeposition of copper tetracyanoquinodimethane for bipolar resistive switching non-volatile memories", Phil. Trans. R. Soc. A 367 (2009) 4191-4201
R. Müller, J. Genoe, and P. Heremans "Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide "switching layer"", Appl. Phys. Lett. 95 (2009) 133509
S. Spiga, A. Lamperti, E. Cianci, F. G. Volpe, and M. Fanciulli, "Transition Metal Binary Oxides for ReRAM Applications", ECS Transactions 25(6) (2009) 411-425
D. Ielmini, "Reliability issues and modeling of Flash and post-Flash memory", Microelectron. Eng. 86 (2009) 1870-1875.
A. Demolliens, Ch. Muller, D. Deleruyelle, S. Spiga, E. Cianci, M. Fanciulli, F. Nardi, C. Cagli, D. Ielmini, "Reliability of NiO-based resistive switching memory (RRAM) elements with pillar W bottom electrode.", IEEE Proceedings of International Memory Workshop (IMW, Monterey, USA, May 2009), p. 25-27, 2009.
O. Ginez, J.-M. Portal, Ch. Muller, "Design and test challenges in resistive switching RAM (ReRAM): an electrical model for defect injections.", Proceeding of 14th European Test Symposium, ETS, Sevilla, Spain, May 2009, IEEE Proceedings of European Test Symposium, p. 61-66, 2009.
Ch. Muller, "Technologies mémoires émergentes : panorama et perspectives.", L’actualité Composants du CNES, no. 29, p. 2-12, 2008.
D. Ielmini "Modeling of resistance switching and reliability in non volatile PCM and RRAM", Proc. International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2, 108 (2009)
D. Ielmini, F. Nardi, C. Cagli and A. L. Lacaita, "Size-dependent retention time in NiO-based resistive switching memories" IEEE Electron Device Lett. 31 (2010) 353-355.
D. Ielmini, F. Nardi and C. Cagli, "Resistance-dependent amplitude of random telegraph signal noise in resistive switching memories", Appl. Phys. Lett. 96 (2010) 053503.
D. Deleruyelle, Ch. Muller, J. Amouroux and R. Müller, "Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories" Appl. Phys. Lett. 96 (2010) 263504.
A. Demolliens, Ch. Muller, R. Müller, Ch. Turquat, L. Goux, D. Deleruyelle and D.J. Wouters "Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures" J. Crystal Growth 312 (2010) 3267-3275.

Conferences

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"EMMA poster-ICMTD07", 2nd Int. Conf. on Memory Technology and Design, Giens (France), 7-10 May 2007
P. Heremans, R. Müller, J. Billen, A, Katzenmeyer, L. Goux, D.J. Wouters, and J. Genoe, "CuTCNQ Non-volatile memories", Materials Today Asia, 3-5 September 2007, Beijing (China), invited
R. Bez, "CAMELS and EMMA: Current European Projects on Resistive Non-Volatile Memory", International Workshop on "Emerging non volatile memories", 14 September 2007, Munich (D)
Ch. Muller, "Potentialité des mémoires émergentes.", Journée thématique "Architecture reconfigurable", GdR "SoC – SiP", October 2007, Jussieu (F).
Ch. Turquat, A. Demolliens, A. Merlen, J.-Ch. Valmalette, Ch. Muller, R. Müller, L. Goux, D.J. Wouters, "Microstructure and switching characteristics of CuTCNQ nanowires developed for high-density memory devices", 8th Annual Non-Volatile Memory Technology Symposium, November 10-13, 2007 Albuquerque, New Mexico
T. Kever, B. Klopstra, U. Böttger, and R. Waser, "Resistive Switching in Cu:TCNQ thin films, an intrinsic or interface effect", 8th Annual Non-Volatile Memory Technology Symposium, November 10-13, 2007, Albuquerque, New Mexico
U. Russo, D. Ielmini, C. Cagli, A. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli, "Conductive-Filament Switching Analysis and Self-Accelerated Thermal Dissolution Model for Reset in NiO-Based RRAM", IEEE International Electron Devices Meeting, December 10-12, 2007, Washington DC
Ch. Muller, "Principe de fonctionnement et fiabilité des technologies de mémoires émergentes.", Atelier "Mémoires du futur", Centre National d'Etudes Spatiales, Toulouse, France, January 2008, invited
Ch. Muller, L. Courtade, Ch. Turquat, N. Menou, J.G. Lisoni, L. Goux, D.J. Wouters, A. Lamperti, S. Spiga, M. Fanciulli, D. Goguenheim, "Integrated functional oxides in non-volatile memory devices - FeRAM and OxRRAM technologies", Workshop "Oxydes fonctionnels pour l'integration en micro- et nano-electronique", Autrans 16-19 March 2008, invited
R. Müller, J. Billen, A. Katzenmeyer, L. Goux, D.J. Wouters, J. Genoe, and P. Heremans, "Resistive electrical switching of Cu⁺ and Ag⁺ based metal-organic charge-transfer complexes. Insights in the switching mechanism", MRS Spring Meeting 2008, March 24-28 2008, San Francisco, invited
Ch. Muller, "Emerging concepts in non-volatile memory technologies: era of resistance switching memories.", ISVLSI 2008, IEEE Computer Society Annual International Symposium on VLSI, Montpellier, France, April 2008, invited
A. Lamperti, L. Courtade, J.G. Lisoni, L. Goux, C. Turquat, S. Spiga, Ch. Muller, D.J. Wouters, M. Fanciulli, "X-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD.", EMRS 2008, European Materials Research Society, Symposium F "Emerging memory technologies", Strasbourg, France, May 2008.
A. Lamperti et al., "Study of the interfaces in resistive switching NiO thin films coupled with different electrodes (Si, Pt, W, TiN) deposited by ALD and e-beam", EMRS 2008 Spring Meeting, Strasbourg (France), May 26-May 30
S. Spiga et al., "Resistance switching in amorphous and crystalline binary oxides grown by electron beam and atomic layer deposition" EMRS 2008 Spring Meeting, Strasbourg (France), May 26-May 30, invited
Ch. Muller, "Material characterization for the development of emerging non-volatile memories.", EMRS 2008, European Materials Research Society, Symposium F "Emerging memory technologies", Strasbourg, France, May 2008, invited
S. Menzel and R.Waser, "Simulation of the Write Operation in Electrochemical Metallization Memory Cells (ECM)", Nanodays 2008, Aachen, Germany
R. Müller, M.A. Abd Latif, D. Deleruyelle, Ch. Muller, Ch. Turquat, J. Genoe, and P. Heremans "Resistive Electrical Switching of Solution Grown CuTCNQ nanocrystals", Nanoelectronics Days, Aachen (Germany), 13-16 May 2008
Ch. Muller, "Resistive Random Access Memories: principle, performances and hurdles.", 23rd IEEE NVSMW / 3rd ICMTD '08, Opio, France, May 2008. (Panel "New Storage Effects for Non Volatile Memory Application")
R. Müller, A. Katzenmeyer, O. Rouault, L. Goux, D.J. Wouters, J. Genoe, and P. Heremans " Resistive Electrical Switching of Nonvolatile Memories from Electrodeposited CuTCNQ", 3rd International Conference Smart Materials, Structures, Systems (CIMTEC 2008), June 8-13th, 2008, Acireale - Sicily (Italy)
A. Merlen, V. Chevallier, C. Turquat, C. Muller, J.C. Valmalette, R. Müller, L. Goux, D.J. Wouters "Switching mechanism in CuTCNQ-based memory structures studied by Raman spectroscopy", XXI International Conference on Raman Spectroscopy (ICORS 2008), August 17th-22nd, 2008, Uxbridge - West London (United Kingdom)
Ch. Muller Ch., "Technologies mémoires émergentes : l’ère de la commutation de résistance.", Journée "Architectures Reconfigurables et Technologies Emergentes" du GdR "SoC – SiP", ENST, Paris, France, Octobre 2008 (invited talk).
M. Thomas, D. Deleruyelle, T. Kever, A. Demolliens, Ch. Turquat, Ch. Muller, U. Böttger, R. Waser "From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures" NVMTS 2008, 9th annual Non Volatile Memory Technology Symposium, Pacific Grove, USA, November 2008.
S. Spiga et al. "Resistive switching in binary oxides for ReRAM applications" IMST 2008 Memory Workshop, Nov. 2008, Leuven (Belgium)
M. Thomas, D. Deleruyelle, T. Kever, A. Demolliens, Ch. Turquat, Ch. Muller, T. Kever, I. Böttger, R. Waser, R. Müller, L. Goux, D.J. Wouters "Resistive switching in CuTCNQ-based non-volatile memory structures. – IMST 2008, Innovative Mass-Storage Technologies, EU Memory Projects" IMST 2008 Memory Workshop, Nov. 2008, Leuven (Belgium)
M. Thomas, D.Deleruyelle, T. Kever, R. Müller, A. Demolliens, Ch. Turquat, L. Goux, U. Böttger, D.J. Wouters, R. Waser, Ch. Muller, "Integration of metal organic complex CuTCNQ in via holes: towards high density resistive switching memory devices" MAM 2009, Materials for Advanced Metallization, Grenoble, France, March 2009.
R. Mueller, N. Thomas, C. Krebs, L. Goux, D. J. Wouters, J. Genoe, P. Heremans, S. Spiga and M. Fanciulli, "Resistive Electrical Switching of CuTCNQ Based Memory with a Dedicated Switching Layer.", MRS Spring Meeting 2009, April 13-17th 2009, San Francisco
S. Menzel, G. Staikov, and R. Waser "A Simulation Model of Resistive Switching in Electrochemical Metallization Memory Cells (ECM).", MRS Spring Meeting 2009, April 13-17th 2009, San Francisco
S. Spiga, A. Lamperti, E. Cianci, G. Tallarida, F.G. Volpe, M. Fanciulli, A. Demolliens, Ch. Turquat, Ch. Muller, U. Russo, C. Cagli, and D. Ielmini "Engineering of Electrode Materials for NiO Resistive Switching non Volatile Memories.", MRS Spring Meeting 2009, April 13-17th 2009, San Francisco
C. Kügeler, R. Rosezin, R. Weng, S. Menzel, B. Klopstra, U. Böttger, R. Waser, "Fast resistive switching in WO3 thin films for non-volatile memory applications", Proc. of 9th IEEE Nanotechnology Conference 2009, Genova, pp. 1102-1105
Sabina Spiga, "Oxide for Nanoelectronics", School on superconductors and functional oxides, May 27th, 2009, Palinuro (Italy)
A. Demolliens, Ch. Muller, D. Deleruyelle, S. Spiga, E. Cianci, M. Fanciulli, F. Nardi, C. Cagli, D. Ielmini, "Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode." International Memory Workshop, IMW, Monterey, USA, May 2009.
O. Ginez, J.-M. Portal, Ch. Muller, "Design and test challenges in resistive switching RAM (ReRAM): an electrical model for defect injections.", European Test Conference 2009, Sevilla, Spain, May 2009.
Ch. Muller "Electrical performances of NiO resistive switching material integrated in via holes or deposited on top of pillar W bottom electrode." Workshop on Innovative Memory Technologies, CEA-LETI, Grenoble, France, June 2009 (invited talk).
Sabina Spiga, "Emerging non-volatile memory device", Nanoforum 2009 (Session on "Micro & Nanodevices"), June 10th 2009, Torino (Italy), invited
D. Ielmini, "Reliability issues and modeling of Flash and post-Flash memory" Insulating Films on Semiconductors – INFOS, Cambridge, UK (June 2009).
D. Deleruyelle, M. Thomas, Ch. Muller, R. Müller, L. Goux, D.J. Wouters, T. Kever, U. Böttger, R. Waser "Nanoscale electrical characterization of CuTCNQ layers by conductive AFM in view of their use as Resistive Random Access Memory (RRAM)", EMRS 2009, European Materials Research Society, Symposium G "Fundamentals and technology of multifunctional oxide thin films", Strasbourg, France, June 2009.
D. Deleruyelle, M. Thomas, Ch. Muller, R. Müller, L. Goux, D.J. Wouters, T. Kever, U. Böttger, R. Waser "Resistive switching memories.", Satellite Workshop of IEEE Nano 2009 on Emerging non-volatile memories, Genoa, Italy, July 2009.
D. Ielmini "Overview of modeling approaches for scaled non volatile memories" International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, San Diego, CA, USA, Sept. 9-11, 2009.
S. Spiga, A. Lamperti, E. Cianci, F. G. Volpe, and M. Fanciulli, "Transition Metal Binary Oxides for ReRAM Applications" 216th ECS Meeting, October 4-9, 2009, Vienna (Austria), invited presentation (M. Fanciulli)
Ch. Muller Ch., "Resistance switching memories: challenging integration in small interconnect structures.", Advanced Metallization Conference, Baltimore, USA, October 2009 (invited talk).
C. Dumas, D. Deleruyelle, G. Micolau, A. Demolliens, Ch. Muller, S. Spiga, E. Cianci, M. Fanciulli, I. Tortorelli, R. Bez, "Performances of resistive switching NiO films deposited on top of W or Cu pillar bottom electrode." NVMTS 2009, 10th annual Non Volatile Memory Technology Symposium, Portland, USA, October 2009.
D. Ielmini, F. Nardi, A. Vigani, E. Cianci and S. Spiga, "Read-disturb limited reliability of multilevel NiO-based resistive-switching memory" IEEE Semiconductor Interface Specialist Conference (SISC), Arlington, VA, Dec. 3-5, 2009.
S. Spiga "Resistance switching in transition metal oxides for non-volatile memory application", MRS 2010- Symposium G, April 5-9, 2010, San Francisco (CA, USA), invited presentation
D. Ielmini, "Fundamental scaling tradeoff for NiO-based RRAMs", Workshop on Emerging Technologies in Solid State, Dec. 5-6, 2009, Baltimore, MD, USA.
D. Ielmini, F. Nardi, C. Cagli and A. L. Lacaita, "Size-dependent temperature instability in NiO–based resistive switching memory", MRS Spring Meeting, April 5-9, 2010, San Francisco, CA, USA.
R. Müller, J. Genoe and P. Heremans, "Structure, mechanism, and programming sequence for repeatable bipolar resistive electrical switching of AgTCNQ based memory cells", MRS Spring Meeting, April 5-9, 2010, San Francisco, CA, USA.
D. Ielmini, F. Nardi, C. Cagli and A. L. Lacaita, "Trade-off between data retention and reset in NiO RRAMs", IRPS, May 2-6, 2010, Anaheim, CA, USA.