Compound semiconductors of the III-nitride material system like AlxGa1-xN, spanning band gaps from 3.4 to 6.2 eV, are promising candidates for solar blind UV detector devices. The European Space Agency (ESA) considers the application of such a detector for applications in the extreme ultra-violet on their next solar mission. The absence of high quality AlGaN substrates has forced the material growth development towards heteroepitaxy solutions. Common substrates for this kind of material are SiC and Sapphire and, with increasing attention, Silicon. While SiC and Sapphire providing small wafer sizes Si(111) is available in both, large wafer size (up to 8inch) and high crystal quality. Unlike single devices like transistors or LEDs, a camera array development requires large area substrates to reach the uniformity specifications. The aim of the project is to fabricate 1000x1000 pixel arrays with 10 micron pitch. The wavelength range of interest is between 10 and 100nm in the extreme ultra-violet band.
Compound semiconductors of the III-nitride material system like AlxGa1-xN, spanning band gaps from 3.4 to 6.2 eV, are promising candidates for solar blind UV detector devices. The European Space Agency (ESA) considers the application of such a detector for applications in the extreme ultra-violet on their next solar mission. The absence of high quality AlGaN substrates has forced the material growth development towards heteroepitaxy solutions. Common substrates for this kind of material are SiC and Sapphire and, with increasing attention, Silicon. While SiC and Sapphire providing small wafer sizes Si(111) is available in both, large wafer size (up to 8inch) and high crystal quality. Unlike single devices like transistors or LEDs, a camera array development requires large area substrates to reach the uniformity specifications. The aim of the project is to fabricate 1000x1000 pixel arrays with 10 micron pitch. The wavelength range of interest is between 10 and 100nm in the extreme ultra-violet band.
